Jun.2022 18

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Semiconductor high voltage diode parameter symbols and their meanings

Introduction

Semiconductor high voltage diode parameter symbols and their meanings

Details

Semiconductor high voltage diode parameter symbols and their meanings

IF---Forward DC current (forward test current). The current passing through the inter-electrode of the germanium detection diode under the specified forward voltage VF; the maximum operating current (average value) allowed to pass continuously in the sinusoidal half-wave of the silicon rectifier and silicon stack under the specified conditions of use, and the silicon switch The maximum forward DC current allowed to pass through the diode under rated power; the current given when measuring the forward electrical parameters of the Zener diode

IF(AV)---forward average current

IFM (IM)---Forward peak current (forward maximum current). The maximum forward pulse current allowed through the diode at rated power. LED limiting current.

IH---Constant current, holding current.

Ii---light-emitting diode ignition current

IFRM---forward repetitive peak current

IFSM---forward non-repetitive peak current (surge current)

Io---rectified current. The operating current that passes under specified frequency and specified voltage conditions in a specific line

IF(ov)---Forward overload current

IL---photocurrent or steady current diode limit current

ID---dark current

IB2---Base modulation current in unijunction transistor

IEM---emitter peak current

IEB10---Reverse current between the emitter and the first base in a double-base unijunction transistor

IEB20---emitter current in double base unijunction transistor

ICM---Maximum output average current

iF---forward total instantaneous current

iR---reverse total instantaneous current

ir---reverse recovery current

Iop---operating current

Is---Stabilizing diode current stabilization

f---frequency

n---capacitance change index; capacitance ratio

Q---Excellence value (quality factor)

δvz---voltage regulator tube voltage drift

di/dt---critical rise rate of on-state current

dv/dt---critical rise rate of on-state voltage

IFMP---forward pulse current

IP---peak current

IV---valley point current

IR(AV)---reverse average current

IR (In)---Reverse DC current (reverse leakage current). When measuring the reverse characteristics, a given reverse current; the current passing through when silicon is stacked in a sinusoidal half-wave resistive load circuit and a specified value of reverse voltage is applied; the reverse operating voltage VR is applied to both ends of the silicon switching diode The current passing through; the leakage current generated by the Zener diode under the reverse voltage; the leakage current of the rectifier under the highest reverse operating voltage of the sine half wave.

IRM---Inverse peak current

IRR---Thyristor reverse repetitive average current

IDR---Thyristor off-state average repetitive current

IRRM---inverse repetitive peak current

IRSM---reverse non-repetitive peak current (reverse surge current)

Irp---reverse recovery current

Iz --- Stable voltage and current (reverse test current). When testing reverse electrical parameters, the given reverse current

Izk---Knee point current of voltage regulator tube

IOM---maximum forward (rectified) current. Under specified conditions, the maximum forward instantaneous current that can be withstood; the maximum operating current allowed to continuously pass through the germanium detector diode in a sinusoidal half-wave rectifier circuit with resistive load

IZSM --- Zener diode surge current

IZM---Maximum regulated current. The current allowed to pass through the Zener diode at maximum power dissipation

CT---barrier capacitance

Cj---junction (interelectrode) capacitance, indicating the total capacitance of the germanium detection diode under the specified bias voltage applied to both ends of the diode.

Cjv---bias junction capacitance

Co---zero bias capacitor

Cjo---zero bias junction capacitance

Cjo/Cjn---junction capacitance change

Cs---case capacitor or package capacitor

Ct---total capacitance

CTV---voltage temperature coefficient. The ratio of the relative change of the stable voltage to the absolute change of the ambient temperature under the test current

CTC---capacitance temperature coefficient

Cvn---nominal capacitance

PB---withstand pulse burnout power

PFT (AV)---average power dissipated in forward conduction

PFTM---forward peak power dissipation

PFT---Forward conduction total instantaneous power dissipation

Pd---dissipated power

PG---gate average power

PGM---peak gate power

PC---Control pole average power or collector dissipated power

Pi---input power

PK---maximum switching power

PM---rated power. The maximum power that the silicon diode can withstand when its junction temperature is not higher than 150 degrees

PMP---maximum leaked pulse power

PMS---maximum withstand pulse power

Po---output power

PR---reverse surge power

Ptot---total power dissipated

Pomax---maximum output power

Psc---continuous output power

PSM---non-repetitive surge power

PZM---maximum power dissipation. The maximum power a Zener diode is allowed to withstand under given conditions of use

RF(r)---Forward differential resistance. During forward conduction, the current shows obvious nonlinear characteristics as the voltage index increases. Under a certain forward voltage, if the voltage increases by a small amount △V, the forward current increases correspondingly by △I, then △V/△I is called differential resistance.

RBB---Resistance between bases of double-base transistor

RE---radio frequency resistor

RL---load resistance

Rs(rs)----series resistance

Rth----Thermal resistance

R(th)ja----Thermal resistance from junction to environment

Rz(ru)---Dynamic resistance

R(th)jc---Thermal resistance from junction to case

r δ---attenuation resistance

r(th)---Transient resistance

Ta---ambient temperature

Tc---case temperature

td---delay time

tf---fall time

tfr---forward recovery time

tg---circuit commutation off time

tgt---gate control pole turn-on time

Tj---junction temperature

Tjm---maximum junction temperature

ton---opening time

toff---off time

tr---rise time

trr---reverse recovery time

ts---storage time

tstg---storage temperature of temperature compensation diode

a---temperature coefficient

λp---luminescence peak wavelength

△ λ---Spectral half-width

eta---single-junction transistor partial pressure ratio or efficiency

VB---reverse peak breakdown voltage

Vc---rectified input voltage

VB2B1---voltage between bases

VBE10---reverse voltage between emitter and first base

VEB---saturation voltage drop

VFM---maximum forward voltage drop (forward peak voltage)

VF---Forward voltage drop (forward DC voltage)

△VF---Forward voltage drop difference

VDRM---off-state repetitive peak voltage

VF(AV)---forward average voltage

Vo---AC input voltage

VOM---maximum output average voltage

Vop---working voltage

Vn---center voltage

Vp---peak voltage

VR---reverse operating voltage (reverse DC voltage)

VRM---reverse peak voltage (highest test voltage)

V(BR)---breakdown voltage

VRRM---reverse repetitive peak voltage (reverse surge voltage)

VRWM---reverse working peak voltage

V v---Valley point voltage

Vz---stable voltage

△Vz---voltage increment of voltage regulation range

Vs---lead voltage (signal voltage) or stable current voltage of the current regulator

av---voltage temperature coefficient

Vk---Knee point voltage (stabilizing diode)

VL ---limit voltage

IF(AV)---forward average current

IFM (IM)---Forward peak current (forward maximum current). The maximum forward pulse current allowed through the diode at rated power. LED limiting current.

IH---Constant current, holding current.

Ii---light-emitting diode ignition current

IFRM---forward repetitive peak current

IFSM---forward non-repetitive peak current (surge current)

Io---rectified current. The operating current that passes under specified frequency and specified voltage conditions in a specific line

IF(ov)---Forward overload current

IL---photocurrent or steady current diode limit current

ID---dark current

IB2---Base modulation current in unijunction transistor

IEM---emitter peak current

IEB10---Reverse current between the emitter and the first base in a double-base unijunction transistor

IEB20---emitter current in double base unijunction transistor

ICM---Maximum output average current

iF---forward total instantaneous current

iR---reverse total instantaneous current

ir---reverse recovery current

Iop---operating current

Is---Stabilizing diode current stabilization

f---frequency

n---capacitance change index; capacitance ratio

Q---Excellence value (quality factor)

δvz---voltage regulator tube voltage drift

di/dt---critical rise rate of on-state current

dv/dt---critical rise rate of on-state voltage

IFMP---forward pulse current

IP---peak current

IV---valley point current

IR(AV)---reverse average current

IR (In)---Reverse DC current (reverse leakage current). When measuring the reverse characteristics, a given reverse current; the current passing through when silicon is stacked in a sinusoidal half-wave resistive load circuit and a specified value of reverse voltage is applied; the reverse operating voltage VR is applied to both ends of the silicon switching diode The current passing through; the leakage current generated by the Zener diode under the reverse voltage; the leakage current of the rectifier under the highest reverse operating voltage of the sine half wave.

IRM---Inverse peak current

IRR---Thyristor reverse repetitive average current

IDR---Thyristor off-state average repetitive current

IRRM---inverse repetitive peak current

IRSM---reverse non-repetitive peak current (reverse surge current)

Irp---reverse recovery current

Iz --- Stable voltage and current (reverse test current). When testing reverse electrical parameters, the given reverse current

Izk---Knee point current of voltage regulator tube

IOM---maximum forward (rectified) current. Under specified conditions, the maximum forward instantaneous current that can be withstood; the maximum operating current allowed to continuously pass through the germanium detector diode in a sinusoidal half-wave rectifier circuit with resistive load

IZSM --- Zener diode surge current

IZM---Maximum regulated current. The current allowed to pass through the Zener diode at maximum power dissipation

CT---barrier capacitance

Cj---junction (interelectrode) capacitance, indicating the total capacitance of the germanium detection diode under the specified bias voltage applied to both ends of the diode.

Cjv---bias junction capacitance

Co---zero bias capacitor

Cjo---zero bias junction capacitance

Cjo/Cjn---junction capacitance change

Cs---case capacitor or package capacitor

Ct---total capacitance

CTV---voltage temperature coefficient. The ratio of the relative change of the stable voltage to the absolute change of the ambient temperature under the test current

CTC---capacitance temperature coefficient

Cvn---nominal capacitance

PB---withstand pulse burnout power

PFT (AV)---average power dissipated in forward conduction

PFTM---forward peak power dissipation

PFT---Forward conduction total instantaneous power dissipation

Pd---dissipated power

PG---gate average power

PGM---peak gate power

PC---Control pole average power or collector dissipated power

Pi---input power

PK---maximum switching power

PM---rated power. The maximum power that the silicon diode can withstand when its junction temperature is not higher than 150 degrees

PMP---maximum leaked pulse power

PMS---maximum withstand pulse power

Po---output power

PR---reverse surge power

Ptot---total power dissipated

Pomax---maximum output power

Psc---continuous output power

PSM---non-repetitive surge power

PZM---maximum power dissipation. The maximum power a Zener diode is allowed to withstand under given conditions of use

RF(r)---Forward differential resistance. During forward conduction, the current shows obvious nonlinear characteristics as the voltage index increases. Under a certain forward voltage, if the voltage increases by a small amount △V, the forward current increases correspondingly by △I, then △V/△I is called differential resistance.

RBB---Resistance between bases of double-base transistor

RE---radio frequency resistor

RL---load resistance

Rs(rs)----series resistance

Rth----Thermal resistance

R(th)ja----Thermal resistance from junction to environment

Rz(ru)---Dynamic resistance

R(th)jc---Thermal resistance from junction to case

r δ---attenuation resistance

r(th)---Transient resistance

Ta---ambient temperature

Tc---case temperature

td---delay time

tf---fall time

tfr---forward recovery time

tg---circuit commutation off time

tgt---gate control pole turn-on time

Tj---junction temperature

Tjm---maximum junction temperature

ton---opening time

toff---off time

tr---rise time

trr---reverse recovery time

ts---storage time

tstg---storage temperature of temperature compensation diode

a---temperature coefficient

λp---luminescence peak wavelength

△ λ---Spectral half-width

eta---single-junction transistor partial pressure ratio or efficiency

VB---reverse peak breakdown voltage

Vc---rectified input voltage

VB2B1---voltage between bases

VBE10---reverse voltage between emitter and first base

VEB---saturation voltage drop

VFM---maximum forward voltage drop (forward peak voltage)

VF---Forward voltage drop (forward DC voltage)

△VF---Forward voltage drop difference

VDRM---off-state repetitive peak voltage

VF(AV)---forward average voltage

Vo---AC input voltage

VOM---maximum output average voltage

Vop---working voltage

Vn---center voltage

Vp---peak voltage

VR---reverse operating voltage (reverse DC voltage)

VRM---reverse peak voltage (highest test voltage)

V(BR)---breakdown voltage

VRRM---reverse repetitive peak voltage (reverse surge voltage)

VRWM---reverse working peak voltage

V v---Valley point voltage

Vz---stable voltage

△Vz---voltage increment of voltage regulation range

Vs---lead voltage (signal voltage) or stable current voltage of the current regulator

av---voltage temperature coefficient

Vk---Knee point voltage (stabilizing diode)

VL ---limit voltage