• CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS

CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA 60nS

Products Main features:
1、Axial leaded connection.
2、High thermal conductivity epoxy compound molding.
3、Quick connect terminals can be installed.
4、Special high temperature resistant chip protective glue.
5、Excellent discharge characteristics.
6、High speed switch response characteristics.
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  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
  • CL08-10T Ultra Fast Recovery High Voltage Diode 10KV 350mA  60nS
Desciption
CL08-10T Ultra Fast Recovery High Voltage Diode  Data Sheet
 Parameter Symbol Unit Test Conditions Value
 Repetitive Peak Backward Voltage Vrrm KV Ta=25℃  Ir=2.0μA 10
 Peak Working Backward Voltage Vrwm KV Ta=25℃  Ir=2.0μA 10
 Average Forward Current If(AV) mA 50Hz Half-sine Wave , Resistance load @Tbreak=50℃ 350
 Backward Recovery Time Trr nS   60
 Surge Forward Current Ifsm A 0.01S @ Half-Sine wave  50Hz 20
 Junction Temperature(MAX) Ta   -40~+150
 Storage Temperature Tstg   -40~+125
 Forward Peak Voltage Vfm V   ≥16.0
 Backward Peak  Current Irrm1 μA @ Ta=25℃ VRM=VRRM 2
Irrm2 μA @ Ta=100℃ VRM=VRRM 20.0
 Absolute Maximum Ratings & Electrical Characteristics
HVDIODE - Suly Electronics Co., Ltd.
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