• NVD-12 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-12 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS

NVD-12 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS

Products Main features:
1、Axial leaded connection;
2、High thermal conductivity epoxy compound molding;
3、Special passivation glue chip protection;
4、Fast reverse recovery time for high efficiency;
5、Reverse leakage current is in the nanoampere range;
6、Ultra small size packaging.
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  • NVD-12 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
Desciption
 NVD-12  Fast Recovery High Voltage Diode Arrays Data Sheet
 ParameterSymbolUnitTest ConditionsValue
 Repetitive Peak Backward VoltageVrrmKVTa=25℃  Ir=1.0nA1.2
 Average Forward CurrentIf2(AV)mATa=25℃  In air5
 Average Forward CurrentIf2(AV)mATa=60℃  In oil5
 Backward Recovery TimeTrrnS 50
 Surge Forward CurrentIfsmA0.01S @ Half-Sine wave  50Hz0.5
 Junction Temperature(MAX)Ta -55~+125
 Storage Temperature(MAX)Tstg -55~+125
 Forward Peak VoltageVfmV ≥4.0
 Backward Peak  CurrentIrrm1nA@ Ta=25℃ VRM=VRRM1.0
Irrm2nA@ Ta=60℃ VRM=VRRM5.0
 Absolute Maximum Ratings & Electrical Characteristics
Expects To Provide You With Perfect Service
Expects To Provide You With Perfect Service
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