• NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS

NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS

Products Main features:
1、Axial leaded connection;
2、High thermal conductivity epoxy compound molding;
3、Special passivation glue chip protection;
4、Fast reverse recovery time for high efficiency;
5、Reverse leakage current is in the nanoampere range;
6、Ultra small size packaging.
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
  • NVD-4 Fast recovery high voltage diode arrays 1.2KV 5mA 50nS
Desciption
 NVD-4  Fast Recovery High Voltage Diode Arrays Data Sheet
 Parameter Symbol Unit Test Conditions Value
 Repetitive Peak Backward Voltage Vrrm KV Ta=25℃  Ir=1.0nA 1.2
 Average Forward Current If2(AV) mA Ta=25℃  In air 5
 Average Forward Current If2(AV) mA Ta=60℃  In oil 5
 Backward Recovery Time Trr nS   50
 Surge Forward Current Ifsm A 0.01S @ Half-Sine wave  50Hz 0.5
 Junction Temperature(MAX) Ta   -55~+125
 Storage Temperature(MAX) Tstg   -55~+125
 Forward Peak Voltage Vfm V   ≥4.0
 Backward Peak  Current Irrm1 nA @ Ta=25℃ VRM=VRRM 1.0
Irrm2 nA @ Ta=60℃ VRM=VRRM 5.0
 Absolute Maximum Ratings & Electrical Characteristics
HVDIODE - Suly Electronics Co., Ltd.
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